Publications

Publications List of Dr. S. Yuan

Book Chapters:

B-2    “Semiconductor Nanowires for Electronic and Optoelectronic Device Applications”

(full-text pdf file click here to download)

Chapter 8 in “Handbook of Semiconductor Nanostructures and Nanodevices”,

pages 279-310, Edited by A. A. Balandin and K. L. Wang,  by American Scientific Publishers, New York, 2006

S. Yuan, H. M. Lam, and S. G. Ma

 

B-1    “Quantum Well Intermixing by Ion Implantation and Anodic Oxidization”

in  “Semiconductor Quantum Well  Intermixing”,

Edited by.  E. Herbert Li, Gordon and Breach, Amsterdam pages 307-338(2000)

B. S. Tan, S. Yuan, M. Gal and C. Jagadish

 

Patents (only granted US patents are listed here) :

P-1     X. J. Kang, D. K. Wu, E. R. Perry, S.Yuan, Patent No. : US80346432B2, 10/11/2011,Method for fabrication of a semiconductor device.

P-2    S. Yuan, X. J. Kang, S.M. Lin, Patent No. : US8067269B2, 11/29/2011,Method for fabricating at least one transistor.

P-3    S. Yuan, X. J. Kang, S.M. Lin, Patent No. : US8329556B2, 12/11/2012,Localized annealing during semiconductor device fabrication.

P-4   X. J. Kang, Z. Chen, T. K. Ng, J. Lam, S. Yuan, Patent No. : US8395167B2, 03/12/2013,External light efficiency of light emitting diodes.

P-5  X. J. Kang, S. Yuan, Z. Chen, J. Lam, Patent No. : US8507367B2, 08/13/2013, Separation of semiconductor devices.

P-6.  S. Yuan, X. J. Kang, D. K. Wu, Patent No. : US8004001B2, 08/23/2011, Fabricating of semiconductor devices for lighting emission.

P-7   S. Yuan, S. M. Lin, Patent No. : US8124994B2, 02/28/2012, Electrical current distribution in light emitting diodes.

P-8 S. Yuan, X. J. Kang, Patent No. : US8426292B2, 04/23/2013,Process for sapphire substrate separation by laser.

P-9 S. Yuan, X. J. Kang, Patent No. : US8426292B2, 06/27/2010, Fabrication of semiconductor devices.

P-10. S. Yuan, X. J. Kang, Patent No. : US8309377B2, 11/13/2012, Fabrication of reflective layer on semiconductor light emitting diodes.

P-11   S. Yuan, US Patent No: US8395168B2,       Semiconductor wafers and semiconductor devices with polishing stops and method of making the same 

 

 

Journal Papers:

 

 

J-56  “Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls“

PHYSICA STATUS SOLIDI A，213(2016)，1181-1186

J.J. Lu, ,Zheng, C.J.Zheng, S.J. Zhou, F. Fang, & S. Yuan

 

J-55 “Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking layer”

S. J. Zhou, S. Yuan, S. Liu, and H. Ding

 

J-54 “Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light”

S. J. Zhou, B. Cao, S. Yuan, and S. Liu

 

J-53 “Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer”

J-52 “Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs”

J-51  “Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls”

J-50   “Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well Lasers”

IEEE Photonics Technology Letters, 18, 791-793 (2006)

C. Y. Liu, S. F. Yoon, W. J. Fan, A. Uddin, and S. Yuan

 

J-49   “InGaAs-GaAs 980-nm stripe-geometry and circular ring ridge waveguide lasers fabricated with pulsed anodic oxidation”

IEEE Photonics Technology Letters, 17, 273 – 275(2005)

C. Y. Liu, Y. Qu, S. Yuan, S. Z. Wang, S. F. Yoon

 

J-48   “Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation”

Applied Physics A, 82, 304-308 (2005)

Y. Qu, J. X. Zhang, A. Uddin, C.Y. Liu, S. Yuan, M.C.Y. Chan, B. Bo, G. Liu and H. Jiang

 

J-47   “Interface study of AlN grown on Si substrates by RF magnetron reactive sputtering”

Thin Solid Film, 471, 336 – 341 (2005)

J. X. Zhang, Y. Z. Chen, A. Uddin, S. Yuan , K. Pita and T.G. Andersson

 

J-46   “Structural and optical characteristics of GaN epilayers grown on Si (111) substrates using hydride vapor phase epitaxy”

Journal of Crystal Growth,282,137 – 142 (2005)

J. X. Zhang, Y. Qu, Y. Z. Chen, A. Uddin, H. D. Li, and S. Yuan

 

J-45   “Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-um InGaAsN triple quantum well lasers”

OPTICS EXPRESS, 13, 9045-9051 (2005)

C.Y. Liu, S. F. Yoon, W.J. Fan, J.W. Teo and S. Yuan

 

J-44   “Thermal excitation effects of photoluminescence of annealed GaInNAs/GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy”

Journal of Vacuum Science and Technology B, 23, 1434-1440 (2005)

S. Z. Wang, S. F. Yoon, W. J. Fan, C. Y. Liu, and S. Yuan

 

J-43   “Growth of AlN films on Si (100) and Si(111) substrates by reactive magnetron sputtering”

Surface and Coatings Technology 198, 68 – 73(2005)

J. X. Zhang, H. Cheng, Y. Z. Chen, A. Uddin , S. Yuan , S. J. Geng, and S. Zhang

 

J-42   “Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate”

Applied Physics Letters, 84, 2757 – 2759 (2004)

B. S. Tan, S. Yuan, and X. J. Kang

 

J-41   “Optimization of ridge height for the fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation”

 Applied Physics Letters, 85, 4594-4596(2004)

C. Y. Liu, Y. Qu, S. Yuan, and S. F. Yoon

 

J-40   “High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm”,

IEEE Photonics Technology Letters. 16, 389-391 (2004).

Y. Qu, S. Yuan, C. Y. Liu, B. X. Bo, G. J. Liu and H. L. Jiang,

 

J-39   “InGaAs/GaAs quantum well circular ring lasers fabricated by laser direct writing and pulsed anodic oxidation”

Journal of Crystal Growth, 268, 364-368 (2004)

C. Y. Liu and S. Yuan

 

J-38   “Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures”

Journal of Crystal Growth, 268, 426-431(2004)

C. Y. Liu, S. Yuan, J. R. Dong, and S. J. Chua

 

J-37   “Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation”

 Journal of Applied Physics, 95, 3422-3426 (2004)

Y. Qu, C. Y. Liu, S. Yuan, S. Z. Wang, S. F. Yoon , C. Y. Chan, and M. H. Hong

 

J-36   “High-power ridge waveguide InGaAsN lasers fabricated with pulsed anodic oxidation”

IEEE Photonics Technology Letters, 16, 2406 – 2408 (2004)

Y. Qu; C.Y. Liu, S.G. Ma, S. Yuan, B. X. Bo, G. J. Liu, and H.L. Jiang

 

J-35   “High power 1.3 mm InGaAsN strain-compensated lasers fabricated with pulsed anodic oxidation”

Applied Physics Letters, 85, 5149-5151 (2004)

Y. Qu, C. Y. Liu, and S. Yuan

 

J-34   “Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation”,

IEEE Photonics Technology Letters, 16, 2409-2411(2004)

C. Y. Liu, S. F.Yoon, S. Z. Wang, W.J. Fan, Y. Qu, and S. Yuan

 

J-33   “Growth of ß-Ga ₂O ₃ nanoparticles by pulsed laser ablation technique”

Applied Physics A, 79, 2099 – 2102 (2004)

H.M. Lam, M.H. Hong, S. Yuan and T.C. Chong

 

J-32   “Investigation of the optical properties of InGaAsN/GaAs/GaAsP multiple-quantum-well laser with 8-band and 10-band k ^. pmodel”

Journal of Applied Physics, 96, 4663-4665(2004)

T. K. Ng, W. J. Fan, S. F. Yoon, S. Z. Wang, Y. Qu, C. Y. Liu, S. G. Ma, and S. Yuan

 

J-31   “Continuous-wave operation of AlGaInP/GaInP quantum well lasers grown by metalorganic vapor phase epitaxy usingtertiarybutylphosphine”

Journal of Applied Physics, 95, 5252-5254(2004)

J. R. Dong, J. H. Teng, S. J. Chua, B. C. Foo, Y, J. Wang, L. W. Zhang and S. Yuan

 

J-30   “Origin of photoluminescence of GaAsN/GaN(001) layers grown by  plasma-assisted solid source molecular beam epitaxy”

Journal of Crystal Growth, 255, 258-265 (2003)

S. Z. Wang, S.F. Yoon, W.K. Loke, C.Y. Liu, and S. Yuan

 

J-29   “Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganicchemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine”

Journal of Applied Physics, 94, 2962-2967(2003)

C. Y. Liu, S. Yuan, J. R. Dong, S. J. Chua,M. C. Y. Chan,and S. Z. Wang

 

J-28   “Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum wells”

Journal of Applied Physics, 93, 9823-9829(2003)

S. Yuan, C. Y. Liu, F. Zhao, M. C. Y. Chan, W. K. Tsui, L. V. Dao, and X. Q. Liu

 

J-27   “650 nm AlGaInP multi-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”

Applied Physics Letters, 83, 596-598 (2003)

J. R. Dong, J. H. Teng, S. J. Chua, B. C. Foo, Y. J. Wang, H. R. Yuan and S. Yuan

 

J-26   “High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers”

Journal of Crystal Growth 253, 161-166 (2003)

J. R. Dong, J. H. Teng, S. J. Chua, Y. J. Wang, B. C. Foo, H. R. Yuan, and S. Yuan

 

J-25   “Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs”

Thin Solid Films 426, 186 – 190 (2003)

F. Zhao, I. W. Choi, S. Yuan, C. Y. Liu, J. Jiang, andM. Chan

 

J-24 “AlN films deposited under various nitrogen concentrations by RF reactive sputtering”

Journal of Crystal Growth, 254, 46-54(2003)

Cheng, Y. Sun, J.X. Zhang, Y.B. Zhang, S. Yuan, P. Hing

 

J-23   “Hall and photoluminescence studies of effects of the thickness of an additional InGaAs layer in the  center ofInGaAs/AlGaAs/GaAs high electron mobility transistors”

Materials Science in Semiconductor Processing, 5, 23-26 (2002)

F. Zhao, C. Y. Liu, S. Yuan, J. Jiang and M. Chan

 

J-22   “Wavelength shifting of adjacent quantum wells in V-groove quantum wire Structure by Selective Implantation and Annealing”

Journal of Applied Physics, 87, 1566-1568(2000)

Y. Q. Liu, W. Lu, X. Chen, S. C. Shen, H. H. Tan, S.Yuan, C. Jagadish, M. B. Johnston, L. V. Dao, M.Gal, J. Zou and D. J. H.Cockayne.

 

J-21   “Arsenic Implantation-induced Intermixing Effects on AlGaAs/GaAs Single QW Structures”

Physics Letters A, 271, 213-216(2000)

X. Q. Liu, Z. F. Li, X. S. Chen, W. Lu, S. C. Shen, H. H. Tan, S. Yuan, and C. Jagadish

 

J-20   “Spatial resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing”

Applied Physics Letters, 75, 3339(1999)

X. Q. Liu, W. Lu, Z. Li, Y. Chen, S.C. Shen, Y. Fu, M. Willander, H. Tan, S. Yuan, C. Jagadish, J. Zou and D. J. H. Cockayne

 

J-19   “Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion”

Japanese Journal of Applied Physics 38, 5044 (1999).

X. Q. Liu, N. Li, X Chen, W. Lu, W. Xu, X. Yuan, N. Li, S.C.Shen, S. Yuan, H. Tan and C.Jagadish

 

J-18   “Energy sublevels in an AlGaAs -GaAs-AlGaAs quantum wire”

Superlattices and Microstructures, 26, 307-15(1999)

L. Fu, M. Willander, X. Q. Liu, W. Lu, S. C. Shen, H. Tan, S. Yuan, and C. Jagadish

 

J-17   “InGaAs/GaAs quantum well laser with C doped cladding and ohmic contact layers”

Journal of Electronic Materials, 27, L61-L63(1998)

G. Li, S. Yuan, H. H. Tan, X. Q. Liu, S. J. Chua, and C. Jagadish

 

J-16   “Anodic-oxide Induced Intermixing in GaAs/AlGaAs Quantum Well and Quantum Wire Structures”

(Invited paper) IEEE Journal of Selected Topics in Quantum Electronics, 4, 629-635(1998)

S. Yuan, C. Jagadish, Yong Kim, Y. Chang, H. H. Tan, R. M. Cohen, M. Petravic, L. V. Dao, M. Gal, M. C. Y. Chan, E. H. Li, and P. S. Zory

 

J-15   “Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells”

Journal of Applied Physics, 83, 1305-1311(1998)

S. Yuan , Y. Kim, C. Jagadish, P. T. Burke, M. Gal, M. C. Y. Chan, E. H. Li,

and R. M. Cohen

 

J-14   “Influence of nonparabolic energy band dispersion on the optical constants close to the fundamental absorption in PbSe andPbMnSe epitaxial layers”

Physical Review, B57, 2393-2401(1998)

H. Krenn, S. Yuan, N. Frank, and G. Bauer

 

J-13   ” Si and C delta -doping for device applications”

Journal of Crystal Growth, 195 , 54-57(1998)

G. Li, M. B. Johnston, A. Babinski, S. Yuan, M. Gal, S. J. Chua, and C. Jagadish

 

J-12   “Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF2”

Thin Solid Films, 323, 126-135(1998)

I. N. Chao, P. J. McCann, W. L. Yuan, E. A. O’Rear, and S. Yuan

 

J-11   “Molecular beam epitaxial growth of Bi2Se3and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)”

Journal of Vacuum Science and Technology, B16, 1459-1462(1998)

X. M. Fang, I-N. Chao, B. N. Strecker, P. J. McCann, S. Yuan, W. K. Liu, M. B. Santos

 

J-10   “Magneto-reflectivity of PbEuTe epilayers and PbTe/PbEuTe multi-quantum wells”

Physical Review, B55, 4607-4619(1997)

S. Yuan, H. Krenn, G. Springholz, Y. Ueta, and G. Bauer

 

J-9     “Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing”

Applied Physics Letters, 70, 1269-1271(1997)

S. Yuan, Y. Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen

 

J-8     “Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown onnonplanar GaAs substrate”

Journal of Applied Physics 80, 5014-5020 (1996)

Y. Kim, S. Yuan, R. Leon, C. Jagadish, M. Gal, M. Johnston, M. Phillips, M. Stevens Kalceff, J. Zou, and D. Cockayne

 

 

J-7     “Optical properties of PbSe/PbMnSe multi-quantum well structures”

Physical Review, B50, 5286-5294(1994)

S. Yuan, N. Frank, G. Bauer and M. Kriechbaum

 

J-6     “Electric and optical properties of PbTe/PbEuTe multi-quantum well structures”

Physical Review, B49, 5476-5489(1994).

S. Yuan, G. Springholz, G. Bauer and M. Kriechbaum

 

J-5     “Dispersion of absorption and refractive index of PbTe and PbEuTe epitaxial layers below and above the fundamental energy gap”

Physical Review, B47, 7213-7226(1993)

S. Yuan, H. Krenn, G. Springholz, and G. Bauer

 

J-4     “Large refractive index enhancement in PbTe/PbEuTe multiquantum well structures”

Applied Physics Letters, 62, 885 -887(1993)

S. Yuan, H. Krenn, G. Springholz, G. Bauer, and M. Kriechbaum

 

J-3     “Photoluminescence of semimagnetic PbTe/PbEuTe quantum wells in magnetic field”

Superlattices and Microstructures, 13, 25-28 (1993)

G. Springholz, M. Kriechbaum, W. Hofmann, F. Geist, H. Pascher, S. Yuan, H. Krenn, and G. Bauer

 

J-2     “Phototransmission study of strained-layer InGaAs/GaAs single quantum well structures”

Journal of Applied Physics, 68, 5388-5390 (1990)

S. Yuan, S. M. Wang, S. Qian, Y. F. Li, T. G. Andersson, and Z. G. Chen

 

J-1     “Comparison between the temporal characteristics of picosecond SRS from the cell and SRO from the droplet”

Optical Communications, 74, 414-417 (1990)

S. X. Qian, S. Yuan, and Y. F. Li

 

Selected Papers Published in International Conference Proceedings

 

C-15 “Optimization of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine andtertiarybutylphosphine”

IEE Proceedings Optoelectronics, 152, 205, (2005)

C. Y. Liu, S. F. Yoon, S. Z. Wang, S. Yuan, J. R. Dong, J. H. Teng, and S. J. Chua

 

C-14 “Hall and photoluminescence studies of effects of the thickness of an additional In_0.3Ga_0.7As layer in the center of In_0.15Ga_0.85As/Al_0.25Ga_0.75As/GaAs high electron mobility transistors”

Materials Science in Semiconductor Processing, 5, 23-26, (2002)

F. Zhao, C. Y. Liu, S. Yuan, J. Jiang and M. C. Y. Chan

 

C-14 “High Power 980-nm Lasers with External Differential Efficiency Improved by Rapid Thermal Annealing”

IEEE Laser and Electro-Optics Society (LEOS)’98 Proc., 2, 124-125(1999)

S. Yuan, L. Fu, Y. Chang, H. Tan, G. Li, and C. G. Jagadish

 

C-13 “InGaAs GRINSCH-SQW lasers with novel carbon delta-doped contact layer”

IEEE Laser and Electro-Optics Society (LEOS)’96 Proc., 2, 132-133 (1996)

S. Yuan, G. Li, H. H. Tan, F. Karouta, and C. Jagadish.

 

 

C-12 “Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion  from Zn doped GaAs substrate”

IEEE Laser and Electro-Optics Society (LEOS)’2000

F. Zhao, I. W. Choi, P. Hing, S. Yuan, T. K. Ong, B. S. Ooi, J. Jiang, M. C. Y. Chan, C. Surya, and E. H. Li

 

C-11 “Interdiffusion in GaAs/AlGaAs quantum wells using anodic and thermal oxides of GaAs”

IEEE Laser and Electro-Optics Society (LEOS)’98 Proc., 2, 36-37(1999)

S. Yuan, G. Li, R. M. Cohen, L. Fu, H. H. Tan, M. B. Johnston, L. V. Dao, M. Gal, and C. Jagadish

 

C-10 “Si and C d -doping for device applications”,

9^th International Conference on Metal Organic Vapour Phase Epitaxy, 196-197( 1998)

G. Li, M. B. Johnston, A. Babinski, S. Yuan, M. Gai and S. J. Chua

 

C-9   “MBE Growth of PbEuSe on CaF2/Si(111)”

Proceeding of the Eighth International Conference on Narrow Gap Semiconductors, p. 101, Editors: S. C. Shen, D. Y. Tang, G.Z.Zheng, and G. Bauer, World Scientific, Singapore (1998)

X. M. Fang, I. Chao, B. N Strecker, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos

 

 

C-8   “Quantum well intermixing for optoelectronic applications”

Materials Research Society (MRS) Symposium Proceedings, 484, 397-411(1997)

C. Jagadish, H. Tan, S.Yuan, and M. Gal

 

C-7   “FTIR Characterization of IV-VI Semiconductors Grown by LPE on (100) BaF2”

Narrow Gap Semiconductors 1995, p. 150, Institute of Physics Publishing Ltd., London (1995)

P. J. McCann, L. Li, S. Yuan, and John E. Furneaux

 

C-6   “Magnetoreflectivity Study of Electron-LO Phonon Interaction in Pb1-xEuxTe and PbTe/Pb1-xEuxTe Multiquantum Wells”

Narrow Gap Semiconductors 1995, p. 173, Institute of Physics Publishing Ltd., London (1995)

S. Yuan, H. Krenn, G. Springholtz, G. Bauer, and P. J. McCann

 

 

C-5   “Growth and Characterization of PbSeTe/PbSnSeTe/PbSeTe Double Heterostructures”

Proceedings of the 1995 International Semiconductor Device Research Symposium, Volume II, p. 505, University of Virginia, Charlottesville, VA (1995)

I. Chao, S. Yuan, and P. J. McCann

 

C-4   “Infrared-Photoconductivity due to Sub-Band Transitions in PbTe/Pb1-xEuxTe and PbSe/Pb1-xMnxSe”

Mat. Res. Soc. Symp. Proc., 299, p. 285 (1994)

S. Yuan, G. Springholz, N. Frank, H. Krenn, G. Bauer and M. Kriechbaum

 

C-3   “EuTe/PbTe superlattices: MBE growth and optical characterization”

Mat. Res. Soc. Proc. 301, 353 (1993)

G. Springholz, S. Yuan, G. Bauer, M. Kriechbaum, H. Krenn

 

C-2   “Optical properties and band offset of PbTe/Pb1-xEuxTe diluted magnetic semiconductor multi quantum wells studied by transmission and photoconductivity measurements”

Mat. Res. Soc. Symp. Proc. 281, 615 (1993)

S. Yuan, G. Springholz, H. Krenn, G. Bauer, M. Kriechbaum

 

C-1   “Optical Confinement in PbTe/Pb1-xEuxTe Multi Quantum Well Structures”

 

SPIE Proceedings Europto Series Vol. 1985, 383 (1993)

S. Yuan, G. Springholz, H. Krenn, G. Bauer, M. Kriechbaum