Patents

Only granted US patents are listed here :

(for granted patents in China, click China patents) 

 

P-1     US80346432B2,   Method for fabrication of a semiconductor device.

P-2    US8067269B2,     Method for fabricating at least one transistor.

P-3    US8329556B2,      Localized annealing during semiconductor device fabrication.

P-4    US8395167B2,       External light efficiency of light emitting diodes.

P-5     US8507367B2,      Separation of semiconductor devices.

P-6.   US8004001B2,     Fabricating of semiconductor devices for lighting emission.

P-7   US8124994B2,       Electrical current distribution in light emitting diodes.

P-8   US8426292B2,       Process for sapphire substrate separation by laser.

P-9   US7763477B2,       Fabrication of semiconductor devices.

P-10. US8309377B2,      Fabrication of reflective layer on semiconductor light emitting diodes.

P-11  US8395168B2,       Semiconductor wafers and semiconductor devices with polishing stops and method of making the same